Room Temperature Spin Hall Effect in Graphene/MoS2 Van Der Waals Heterostructures
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Room Temperature Spin Hall Effect in Graphene/MoS2 Van Der Waals Heterostructures
CIC nanoGUNE Seminars
- Speaker
-
Safeer Chenattukuzhiyil, Nanodevices group
- When
-
2019/02/11
12:00
- Place
- nanoGUNE seminar room, Tolosa Hiribidea 76, Donostia - San Sebastian
- Add to calendar
-
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Graphene is an excellent material for long distance spin transport but allows
little spin manipulation. Transition metal dichalcogenides imprint their
strong spin-orbit coupling into graphene via proximity effect, and it has been
predicted that efficient spin-to-charge conversion due to spin Hall and
Rashba-Edelstein effects could be achieved. Here, by combining Hall probes
with ferromagnetic electrodes, we unambiguously demonstrate experimentally
spin Hall effect in graphene induced by MoS2 proximity and for varying
temperature up to room temperature. The fact that spin transport and spin Hall
effect occur in different parts of the same material gives rise to a hitherto
unreported efficiency for the spin-to-charge voltage output. Additionally, for
a single graphene/MoS2 heterostructure-based device, we evidence a
superimposed spin-to-charge current conversion that can be indistinguishably
associated with either the proximity-induced Rashba-Edelstein effect in
graphene or the spin Hall effect in MoS2. By comparing our results to
theoretical calculations, the latter scenario is found the most plausible one.
Our findings pave the way towards the combination of spin transport and spin-
to-charge conversion in two-dimensional materials, opening exciting
opportunities in a variety of future spintronic applications.
**Reference** : C. K. Safeer, et al., Nano letters, DOI:
10.1021/acs.nanolett.8b04368 (2019)