PhD Mid-term Seminar Series: Tuning superconductivity of single layer NbSe2 with self-assembled monolayers (SAMs)

CIC nanoGUNE Seminars

Speaker

Francesco Calavalle, Nanodevices Group

When

2019/12/02
12:00

Place

nanoGUNE seminar room, Tolosa Hiribidea 76, Donostia - San Sebastian

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** ** **Tuning superconductivity of single layer NbSe 2 with self-assembled monolayers (SAMs)** **** **** One of the goals of materials science today, is the fabrication of materials with on-demand capabilities, which could improve current technologies and inspire novel device concepts. In this search for materials, two-dimensional materials (2DMs) offer a unique opportunity, since their reduced dimensionality makes it possible to controllably tune their intrinsic physical properties through ad-hoc modifications of their surface. Interfacing 2DMs with molecular thin films holds immense potential, since specific functional groups can be integrated in the molecular layer to provide programmable capabilities to 2DMs1,2. One interesting material to explore these possibilities is NbSe2, reported to be superconductor down to the monolayer limit3. We studied this particular 2DMs in combination with different Silane molecules, growing on the surface of NbSe2 self-assembled monolayers via vapor phase deposition. The thin layers of molecules organize itself to form a dipole on the surface of the NbSe2; this leads to a change in the electron-phonon interaction and consequently to a variation of the superconducting critical temperature4. **** **** **** **** **References** 1. Gobbi, M., Orgiu, E. & Samorì, P. When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures. Adv. Mater. 1706103 (2018). doi:10.1002/adma.201706103 2. Marc-Antoine Stoeckel, Marco Gobbi, etAl., **** Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe2 Devices via Tailored Molecular Functionalization **,** ACS Nano 2019 13 (10), 11613-11622 **,** DOI: 10.1021/acsnano.9b05423 3. Ugeda, M. M. et al. Characterization of collective ground states in single-layer NbSe2. Nat. Phys. 12, 92 (2015). 4. Xi, X., Berger, H., Forró, L., Shan, J. & Mak, K. F. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2. Phys. Rev. Lett. 117, 106801 (2016).