
**Towards Magnetoelectric Spin-Orbit Logic Devices**
Diogo C. Vaz
Post-doctoral Researcher, Nanodevices, CIC nanoGUNE
Current strategies for the improvement of CMOS technology are severely
constrained by increasingly larger power requirements. The long-term
progression of Moore’s Law relies on the idealization of beyond-CMOS logic
devices, with drastically different architectures and operation standards. One
of the leading options towards this goal is the proposed magnetoelectric spin-
orbit (MESO) logic device, where a combination of spintronics, non-volatile
elements, and quantum materials enable energy-efficient attojoule-class logic,
charge-based interconnects, favorable device scaling, and majority-gate logic
[1, 2].
Here, we present the first demonstration of a functional MESO device. We
achieve voltage-driven magnetization switching and reading at room
temperature, in Pt/CoFe nanodevices fabricated on a multiferroic BiFeO3 layer.
Switching is performed by application of a voltage pulse to the BiFeO3, which
reverses its ferroelectric and antiferromagnetic state. Through interfacial
coupling, the CoFe magnetization is also reversed. Spin-to-charge conversion
in the Pt/CoFe nanodevice is used to probe the magnetization direction of the
CoFe element [3,4]. We finish by discussing the requirements to achieve stable
and robust magnetization switching/reading, as well as future strategies for
the implementation of cascadable devices and MESO-based logic circuits.
**References **
[1] S. Manipatruni et al., Nature 565, 35-42, 2019.
[2] H. Liu et al., IEEE Journal on Exploratory Solid-State Computational
Devices and Circuits 5, 1-9, 2019.
[3] V. T. Pham S. et al., Nature Electronics 3, 309–315, 2020.
[4] D. C. Vaz et al., IEEE International Electron Devices Meeting (IEDM),
32.4.1-32.4.4, 2021.