Towards Magnetoelectric Spin-Orbit Logic Devices

CIC nanoGUNE Seminars

Diogo C. Vaz, Post-doctoral Researcher, Nanodevices, CIC nanoGUNE
nanoGUNE seminar room, Tolosa Hiribidea 76, Donostia - San Sebastian
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Towards Magnetoelectric Spin-Orbit Logic Devices

**Towards Magnetoelectric Spin-Orbit Logic Devices** Diogo C. Vaz Post-doctoral Researcher, Nanodevices, CIC nanoGUNE Current strategies for the improvement of CMOS technology are severely constrained by increasingly larger power requirements. The long-term progression of Moore’s Law relies on the idealization of beyond-CMOS logic devices, with drastically different architectures and operation standards. One of the leading options towards this goal is the proposed magnetoelectric spin- orbit (MESO) logic device, where a combination of spintronics, non-volatile elements, and quantum materials enable energy-efficient attojoule-class logic, charge-based interconnects, favorable device scaling, and majority-gate logic [1, 2]. Here, we present the first demonstration of a functional MESO device. We achieve voltage-driven magnetization switching and reading at room temperature, in Pt/CoFe nanodevices fabricated on a multiferroic BiFeO3 layer. Switching is performed by application of a voltage pulse to the BiFeO3, which reverses its ferroelectric and antiferromagnetic state. Through interfacial coupling, the CoFe magnetization is also reversed. Spin-to-charge conversion in the Pt/CoFe nanodevice is used to probe the magnetization direction of the CoFe element [3,4]. We finish by discussing the requirements to achieve stable and robust magnetization switching/reading, as well as future strategies for the implementation of cascadable devices and MESO-based logic circuits. **References ** [1] S. Manipatruni et al., Nature 565, 35-42, 2019. [2] H. Liu et al., IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5, 1-9, 2019. [3] V. T. Pham S. et al., Nature Electronics 3, 309–315, 2020. [4] D. C. Vaz et al., IEEE International Electron Devices Meeting (IEDM), 32.4.1-32.4.4, 2021.