A C60-based hot-electron magnetic tunnel transistor
CIC nanoGUNE Seminars
- Speaker
-
Amilcar Bedoya, Nanodevices Group
- When
-
2012/02/20
12:00 - Place
- nanoGUNE seminar room, Tolosa Hiribidea 76, Donostia - San Sebastian
- Add to calendar
- iCal
Organic semiconductors (OS) have emerged as a promising material class for
spintronic applications, mainly due to their weak spin relaxation mechanisms
which result in long spin lifetimes. While recent efforts have focused on the
spin injection and transport in organic semiconductors, there are just few
reports about the intrinsic properties of the molecular material. In
particular, the fact that OSs behave as ordinary semiconductors has not been
yet fully exploited in hybrid spintronic devices. In this work, we report the
achievement of a magnetic tunnel transistor (MTT) which employs fullerene
(C60) as a semiconducting collector. We show that the C60-based MTT, composed
of an Al/Al203/Co/Cu/Py/C60/Al multilayer, perform as state-of-the-art
inorganic MTT, with a magnetocurrent reaching 89% at room-temperature. The
formation of a well-defined Schottky barrier at the metal/ C60 interface and
the transport of a hot-electron current in the C60 layer demonstrate that the
fullerene C60 has the same functionality as an ordinary n-type band-like
semiconductor.