A C60-based hot-electron magnetic tunnel transistor

CIC nanoGUNE Seminars

Amilcar Bedoya, Nanodevices Group
nanoGUNE seminar room, Tolosa Hiribidea 76, Donostia - San Sebastian
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A C60-based hot-electron magnetic tunnel transistor Organic semiconductors (OS) have emerged as a promising material class for spintronic applications, mainly due to their weak spin relaxation mechanisms which result in long spin lifetimes. While recent efforts have focused on the spin injection and transport in organic semiconductors, there are just few reports about the intrinsic properties of the molecular material. In particular, the fact that OSs behave as ordinary semiconductors has not been yet fully exploited in hybrid spintronic devices. In this work, we report the achievement of a magnetic tunnel transistor (MTT) which employs fullerene (C60) as a semiconducting collector. We show that the C60-based MTT, composed of an Al/Al203/Co/Cu/Py/C60/Al multilayer, perform as state-of-the-art inorganic MTT, with a magnetocurrent reaching 89% at room-temperature. The formation of a well-defined Schottky barrier at the metal/ C60 interface and the transport of a hot-electron current in the C60 layer demonstrate that the fullerene C60 has the same functionality as an ordinary n-type band-like semiconductor.