RRAM and Resistive Switching in metal / transition metal oxide interfaces
CIC nanoGUNE Seminars
- Speaker
-
Pablo Levy, Instituto de Nanociencia y Nanotecnologia - CNEA, Buenos Aires, Argentina
- When
-
2010/05/21
14:00 - Place
- nanoGUNE seminar room, Tolosa Hiribidea 76, Donostia - San Sebastian
- Add to calendar
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Multilevel resistance states in silver-manganite interfaces are studied both
experimentally and through a realistic model that includes as a main
ingredient the oxygen vacancies diffusion under applied electric fields. The
switching threshold and amplitude studied through Hysteresis Switching Loops
are found to depend critically on the initial state. The associated vacancy
profiles further unveil the prominent role of the effective electric field
acting at the interfaces. While experimental results validate main assumptions
of the model, the simulations allow to disentangle the microscopic mechanisms
behind the resistive switching in metal transition metal oxide interfaces.