Euler buckling instability and enhanced current blockade in suspended single-electron transistors

DIPC Seminars

Speaker

Dr. Fabio Pistolesi Bordeaux University/CNRS

When

2010/10/21
14:00

Place

Donostia International Physics Center (DIPC).Paseo Manuel de Lardizabal, 4 (nearby the Facultad de Quimica), Donostia

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Single-electron transistors embedded in a suspended nanobeam or carbon nanotube may exhibit effects originating from the coupling of the electronic degrees of freedom to the mechanical oscillations of the suspended structure. Here, we investigate theoretically the consequences of a capacitive electromechanical interaction when the supporting beam is brought close to the Euler buckling instability by a lateral compressive strain. Our central result s that the low-bias current blockade, originating from the electromechanical coupling for the classical resonator, is strongly enhanced near the Euler instability. We predict that the bias voltage below which transport is blocked increases by orders of magnitude for typical parameters. This mechanism may make the otherwise elusive classical current blockade experimentally observable.