Nearly ideal dispersion on graphene onto C-face SiC

DIPC Seminars

Speaker: Antonio Tejeda, Institut Jean Lamour-CNRS, Synchrotron Soleil
When: 2012/06/19
14:00
Place: Donostia International Physics Center (DIPC).Paseo Manuel de Lardizabal, 4 (nearby the Facultad de Quimica), Donostia
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Nearly ideal dispersion on graphene onto C-face SiC

Graphene grown on the (000-1) (C-face) of SiC exhibits all the transport properties of an isolated graphene sheet [1], so it should exhibit the ideal linear dispersion that has been ellusive to observe in other graphene preparations. This system presents several graphene sheets rotated by different angles, giving rise to a non Bernal stacking. Such rotations break the stacking symmetry of graphite and lead to each single sheet behaving like an isolated graphene plane. We have shown that all the graphene rotated sheets leave the linear dispersion unaffected [2-4]. The system exhibits the most ideal linear dispersion observed up to date and accomplishes the requirements for carbon electronics development: compatibility with mass production and standard lithographic techniques, scalability and a nearly ideal dispersion. [1] C. Berger et al., Science 312, 1191 (2006). [2] M. Sprinkle et al., Phys. Rev. Lett. 103, 226803 (2009). [3] M. Sprinkle et al., J. Phys. D: Appl. Phys., 43, 374006 (2010). [4] J. Hicks et al., Phys. Rev. B 83, 205403 (2011).