Quantum transport in nanostructures in presence of strong external perturbations : role of high magnetic fields and electron-phonon interactions

DIPC Seminars

Speaker
Dr. Remi Avriller
When
2010/04/16
14:00
Place
Donostia International Physics Center (DIPC).Paseo Manuel de Lardizabal, 4 (nearby the Facultad de Quimica), Donostia
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Quantum transport in nanostructures in presence of strong external perturbations : role of high magnetic fields and electron-phonon interactions It is well known in the field of molecular electronics that transport properties of nanoscale objects are strongly affected by external perturbations (bias voltages, magnetic fields, role of the substrate, etc...) and by the coupling to internal degrees of freedom (electron-electron and electron-phonon interaction). In this work, we will review current knowledge about transport properties of nano-materials such as carbon nanotubes and molecular junctions under strong magnetic fields and/or high-bias voltages. We will first focuse on three recent magneto-transport experiments [1,2,3] performed on both metallic and semi-conducting carbon nanotubes that reveal a non trivial interplay between magnetic-field induced modulation of the band structure and quantum interferences. In the case of semi-conducting nanotubes, propagative Landau states emerge under high magnetic fields that are responsible for transport properties and are interestingly independent of the chiral index and of disorder [3]. Finally, we will consider the question of high-bias transport properties of carbon nanotubes and the underlying not perturbative problem induced by electron-phonon interaction [4]. We will underline some analogy with recent theoretical advances [5,6] that investigate the full counting statistics (FCS) of transmitted charges in molecular junctions interacting with a local phonon mode. Non perturbative results derived in the quantum regime for the dynamics of the phonon mode [6], allow to develop a new point of view on this open problem. [1] B. Lassagne, J-P. Cleuziou, S. Nanot, W. Escoffier, R. Avriller, S. Roche, L. Forró, B. Raquet, and J.-M Broto, Phys. Rev. Lett. **98** , 176802 (2007). [2] B. Raquet, R. Avriller, B. Lassagne, S. Nanot, W. Escoffier, J.-Marc Broto, and S. Roche, Phys. Rev. Lett. **101** , 046803 (2008). [3] S. Nanot, R. Avriller, W. Escoffier, J.-Marc Broto, S. Roche, and B. Raquet, Phys. Rev. Lett. **103** , 256801 (2009). [4] L. E. F. Foa Torres, R. Avriller, and S. Roche, Phys. Rev. B **78** , 035412 (2008). [5] R. Avriller and A. Levy Yeyati, Phys. Rev. B(R), **80** , 041309(2009) ; T. L. Schmidt and A. Komnik, Phys. Rev. B(R), **80** , 041307(2009) ; F. Haupt, T. Novotny and W. Belzig, Phys. Rev. Lett. **103** , 136601 (2009). [6] D. Urban, R. Avriller and A. Levy Yeyati, In preparation