Modeling of correlated disorder in 2D topological insulators devices

Topological insulators are systems characterised by a gapped bulk and metallic states at the edge of the system. Uncorrelated Anderson disorder can only influence edge states that are not topologically protected. However, the presence of charge puddles and spin-flip processes, very relevant in realistic experimental settings, might also influence the topologically protected edge states.

During the internship, we will develop a numerical model for investigating the effects of spatially correlated disorder on the transport properties of two-dimensional topological systems. We will use the Python programming language, including the KWANT package for quantum transport calculations.